1995
|
Exciton-photon coupling in GaAs bulk microcavities Article de journal A Tredicucci; Y Chen; V Pellegrini; M Börger; L Sorba; F Beltram; F Bassani Il Nuovo Cimento D, 17 (11-12), p. 1747–1751, 1995. @article{tredicucci1995exciton,
title = {Exciton-photon coupling in GaAs bulk microcavities},
author = {A Tredicucci and Y Chen and V Pellegrini and M B\"{o}rger and L Sorba and F Beltram and F Bassani},
year = {1995},
date = {1995-01-01},
journal = {Il Nuovo Cimento D},
volume = {17},
number = {11-12},
pages = {1747--1751},
publisher = {Kluwer Academic Publishers},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Excitonic binding energies in diffused-intermixed GaAs/AlAs/AlGaAs double barrier quantum wells Article de journal RK Kupka; Y Chen Journal of applied physics, 77 (5), p. 1990–1997, 1995. @article{kupka1995excitonic,
title = {Excitonic binding energies in diffused-intermixed GaAs/AlAs/AlGaAs double barrier quantum wells},
author = {RK Kupka and Y Chen},
year = {1995},
date = {1995-01-01},
journal = {Journal of applied physics},
volume = {77},
number = {5},
pages = {1990--1997},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Fabrication of quantum wires and dots by X-ray lithography and Ga+ implantation enhanced intermixing Article de journal RK Kupka; Y Chen; R Planel; H Launois Microelectronic engineering, 27 (1-4), p. 311–316, 1995. @article{kupka1995fabrication,
title = {Fabrication of quantum wires and dots by X-ray lithography and Ga+ implantation enhanced intermixing},
author = {RK Kupka and Y Chen and R Planel and H Launois},
year = {1995},
date = {1995-01-01},
journal = {Microelectronic engineering},
volume = {27},
number = {1-4},
pages = {311--316},
publisher = {Elsevier},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Fabrication of sub-30 nm masks for x-ray nanolithography Article de journal AM Haghiri-Gosnet; C Vieu; G Simon; F Carcenac; A Madouri; Y Chen; F Rousseaux; H Launois Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 13 (6), p. 3066–3069, 1995. @article{haghiri1995fabrication,
title = {Fabrication of sub-30 nm masks for x-ray nanolithography},
author = {AM Haghiri-Gosnet and C Vieu and G Simon and F Carcenac and A Madouri and Y Chen and F Rousseaux and H Launois},
year = {1995},
date = {1995-01-01},
journal = {Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena},
volume = {13},
number = {6},
pages = {3066--3069},
publisher = {American Vacuum Society},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells Article de journal RK Kupka; Y Chen Journal of applied physics, 78 (4), p. 2355–2361, 1995. @article{kupka1995gallium,
title = {Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells},
author = {RK Kupka and Y Chen},
year = {1995},
date = {1995-01-01},
journal = {Journal of applied physics},
volume = {78},
number = {4},
pages = {2355--2361},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Influence of the process environment on the thermal intermixing of GaAs/AlAs/AlGaAs double barrier quantum wells Article de journal RK Kupka; Y Chen Applied physics letters, 67 (11), p. 1612–1614, 1995. @article{kupka1995influence,
title = {Influence of the process environment on the thermal intermixing of GaAs/AlAs/AlGaAs double barrier quantum wells},
author = {RK Kupka and Y Chen},
year = {1995},
date = {1995-01-01},
journal = {Applied physics letters},
volume = {67},
number = {11},
pages = {1612--1614},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Modification of excitonic emission in a GaAs bulk microcavity Article de journal A Tredicucci; Y Chen; V Pellegrini; C Deparis Applied physics letters, 66 (18), p. 2388–2390, 1995. @article{tredicucci1995modification,
title = {Modification of excitonic emission in a GaAs bulk microcavity},
author = {A Tredicucci and Y Chen and V Pellegrini and C Deparis},
year = {1995},
date = {1995-01-01},
journal = {Applied physics letters},
volume = {66},
number = {18},
pages = {2388--2390},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Optical Properties of 3D and 2D Excitons in Semiconductor Microcavities Article de journal R Atanasov; A Tredicucci; F Bassani; Y Chen; J Massies; C Deparis; G Neu VUOTO SCIENZA E TECNOLOGIA, 24 , p. 7–10, 1995. @article{atanasov1995optical,
title = {Optical Properties of 3D and 2D Excitons in Semiconductor Microcavities},
author = {R Atanasov and A Tredicucci and F Bassani and Y Chen and J Massies and C Deparis and G Neu},
year = {1995},
date = {1995-01-01},
journal = {VUOTO SCIENZA E TECNOLOGIA},
volume = {24},
pages = {7--10},
publisher = {PATRON EDITORE},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Recent advances in X-ray nanolithography using synchrotron radiation at Super-ACO Article de journal F Rousseaux; Y Chen; AM Haghiri-Gosnet; H Launois Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 359 (1-2), p. 388–393, 1995. @article{rousseaux1995recent,
title = {Recent advances in X-ray nanolithography using synchrotron radiation at Super-ACO},
author = {F Rousseaux and Y Chen and AM Haghiri-Gosnet and H Launois},
year = {1995},
date = {1995-01-01},
journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
volume = {359},
number = {1-2},
pages = {388--393},
publisher = {North-Holland},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
1994
|
50-nm x-ray lithography using synchrotron radiation Article de journal Y Chen; RK Kupka; F Rousseaux; F Carcenac; D Decanini; MF Ravet; H Launois Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 12 (6), p. 3959–3964, 1994. @article{chen199450,
title = {50-nm x-ray lithography using synchrotron radiation},
author = {Y Chen and RK Kupka and F Rousseaux and F Carcenac and D Decanini and MF Ravet and H Launois},
year = {1994},
date = {1994-01-01},
journal = {Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena},
volume = {12},
number = {6},
pages = {3959--3964},
publisher = {American Vacuum Society},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Replication of very small periodic gratings with proximity x-ray lithography Article de journal Y Chen; RK Kupka; F Rousseaux; MF Ravet; F Carcenac; A Madouri; H Launois Microelectronic Engineering, 23 (1-4), p. 239–242, 1994. @article{chen1994replication,
title = {Replication of very small periodic gratings with proximity x-ray lithography},
author = {Y Chen and RK Kupka and F Rousseaux and MF Ravet and F Carcenac and A Madouri and H Launois},
year = {1994},
date = {1994-01-01},
journal = {Microelectronic Engineering},
volume = {23},
number = {1-4},
pages = {239--242},
publisher = {Elsevier},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Simultaneous scanning tunneling microscope and collection mode scanning near-field optical microscope using gold coated optical fiber probes Article de journal M Garcia-Parajo; E Cambril; Y Chen Applied physics letters, 65 (12), p. 1498–1500, 1994. @article{garcia1994simultaneous,
title = {Simultaneous scanning tunneling microscope and collection mode scanning near-field optical microscope using gold coated optical fiber probes},
author = {M Garcia-Parajo and E Cambril and Y Chen},
year = {1994},
date = {1994-01-01},
journal = {Applied physics letters},
volume = {65},
number = {12},
pages = {1498--1500},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
X-ray lithography: an overview and recent activities at super-ACO Article de journal F Rousseaux; AM Haghiri-Gosnet; Y Chen; MF Ravet; H Launois Le Journal de Physique IV, 4 (C9), p. C9–237, 1994. @article{rousseaux1994x,
title = {X-ray lithography: an overview and recent activities at super-ACO},
author = {F Rousseaux and AM Haghiri-Gosnet and Y Chen and MF Ravet and H Launois},
year = {1994},
date = {1994-01-01},
journal = {Le Journal de Physique IV},
volume = {4},
number = {C9},
pages = {C9--237},
publisher = {EDP sciences},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
1993
|
Center-of-mass quantization of excitons and polariton interference in GaAs thin layers Article de journal A Tredicucci; Y Chen; F Bassani; J Massies; C Deparis; G Neu Physical Review B, 47 (16), p. 10348, 1993. @article{tredicucci1993center,
title = {Center-of-mass quantization of excitons and polariton interference in GaAs thin layers},
author = {A Tredicucci and Y Chen and F Bassani and J Massies and C Deparis and G Neu},
year = {1993},
date = {1993-01-01},
journal = {Physical Review B},
volume = {47},
number = {16},
pages = {10348},
publisher = {APS},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Excitonic polariton interference in the reflectance of GaAs thin films Article de journal A Tredicucci; Y Chen; G Czajkowski; F Bassani Le Journal de Physique IV, 3 (C5), p. C5–389, 1993. @article{tredicucci1993excitonic,
title = {Excitonic polariton interference in the reflectance of GaAs thin films},
author = {A Tredicucci and Y Chen and G Czajkowski and F Bassani},
year = {1993},
date = {1993-01-01},
journal = {Le Journal de Physique IV},
volume = {3},
number = {C5},
pages = {C5--389},
publisher = {EDP sciences},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Polaritons in semiconductor microcavities: effect of Bragg confinement Article de journal Y Chen; A Tredicucci; F Bassani Le Journal de Physique IV, 3 (C5), p. C5–453, 1993. @article{chen1993polaritons,
title = {Polaritons in semiconductor microcavities: effect of Bragg confinement},
author = {Y Chen and A Tredicucci and F Bassani},
year = {1993},
date = {1993-01-01},
journal = {Le Journal de Physique IV},
volume = {3},
number = {C5},
pages = {C5--453},
publisher = {EDP sciences},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Properties of electromagnetic fields in x-ray lithographic masks: Guided modes and beam propagation calculus Article de journal RK Kupka; Y Chen; F Rousseaux; AM Haghiri-Gosnet; H Launois Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 11 (3), p. 667–680, 1993. @article{kupka1993properties,
title = {Properties of electromagnetic fields in x-ray lithographic masks: Guided modes and beam propagation calculus},
author = {RK Kupka and Y Chen and F Rousseaux and AM Haghiri-Gosnet and H Launois},
year = {1993},
date = {1993-01-01},
journal = {Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena},
volume = {11},
number = {3},
pages = {667--680},
publisher = {American Vacuum Society},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Realization of x-ray lithography masks based on diamond membranes Article de journal MF Ravet; A Gicquel; E Anger; ZZ Wang; Y Chen; F Rousseaux MRS Online Proceedings Library Archive, 306 , 1993. @article{ravet1993realization,
title = {Realization of x-ray lithography masks based on diamond membranes},
author = {MF Ravet and A Gicquel and E Anger and ZZ Wang and Y Chen and F Rousseaux},
year = {1993},
date = {1993-01-01},
journal = {MRS Online Proceedings Library Archive},
volume = {306},
publisher = {Cambridge University Press},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Reflectivity of GaAs Thin Films Article de journal F Bassani; Y Chen; G Czajkowski; A Tredicucci physica status solidi (b), 180 (1), p. 115–125, 1993. @article{bassani1993reflectivity,
title = {Reflectivity of GaAs Thin Films},
author = {F Bassani and Y Chen and G Czajkowski and A Tredicucci},
year = {1993},
date = {1993-01-01},
journal = {physica status solidi (b)},
volume = {180},
number = {1},
pages = {115--125},
publisher = {Wiley Online Library},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
1992
|
Effects of the substrate misorientation on the excitonic transition properties in GaAs/AlAs superlattices Article de journal Y Chen; J Massies; G Neu; C Deparis; B Gil Solid state communications, 81 (10), p. 877–881, 1992. @article{chen1992effects,
title = {Effects of the substrate misorientation on the excitonic transition properties in GaAs/AlAs superlattices},
author = {Y Chen and J Massies and G Neu and C Deparis and B Gil},
year = {1992},
date = {1992-01-01},
journal = {Solid state communications},
volume = {81},
number = {10},
pages = {877--881},
publisher = {Pergamon},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Fabrication of sub-100nm linewidth x-ray masks and replication using synchrotron radiation at super-ACO Article de journal F Rousseaux; AM Haghiri-Gosnet; B Kebabi; Y Chen; H Launois Microelectronic Engineering, 17 (1-4), p. 157–160, 1992. @article{rousseaux1992fabrication,
title = {Fabrication of sub-100nm linewidth x-ray masks and replication using synchrotron radiation at super-ACO},
author = {F Rousseaux and AM Haghiri-Gosnet and B Kebabi and Y Chen and H Launois},
year = {1992},
date = {1992-01-01},
journal = {Microelectronic Engineering},
volume = {17},
number = {1-4},
pages = {157--160},
publisher = {Elsevier},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Recent developments for sub-quarter micrometer fabrication Article de journal F Rousseaux; AM Haghiri-Gosnet; Y Chen; MF Ravets; H Launois Japanese journal of applied physics, 31 (12S), p. 4520, 1992. @article{rousseaux1992recent,
title = {Recent developments for sub-quarter micrometer fabrication},
author = {F Rousseaux and AM Haghiri-Gosnet and Y Chen and MF Ravets and H Launois},
year = {1992},
date = {1992-01-01},
journal = {Japanese journal of applied physics},
volume = {31},
number = {12S},
pages = {4520},
publisher = {IOP Publishing},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
1991
|
Improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al, Ga) As quantum well structures Article de journal G Neu; Y Chen; C Deparis; J Massies Applied physics letters, 58 (19), p. 2111–2113, 1991. @article{neu1991improvement,
title = {Improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al, Ga) As quantum well structures},
author = {G Neu and Y Chen and C Deparis and J Massies},
year = {1991},
date = {1991-01-01},
journal = {Applied physics letters},
volume = {58},
number = {19},
pages = {2111--2113},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Interference of the exciton-polariton waves in GaAs thin layers Article de journal Y Chen; F Bassani; J Massies; C Deparis; G Neu EPL (Europhysics Letters), 14 (5), p. 483, 1991. @article{chen1991interference,
title = {Interference of the exciton-polariton waves in GaAs thin layers},
author = {Y Chen and F Bassani and J Massies and C Deparis and G Neu},
year = {1991},
date = {1991-01-01},
journal = {EPL (Europhysics Letters)},
volume = {14},
number = {5},
pages = {483},
publisher = {IOP Publishing},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
1990
|
Exchange-induced splitting of exciton energy levels in quantum wires Article de journal Y Chen Physical Review B, 41 (15), p. 10604, 1990. @article{chen1990exchange,
title = {Exchange-induced splitting of exciton energy levels in quantum wires},
author = {Y Chen},
year = {1990},
date = {1990-01-01},
journal = {Physical Review B},
volume = {41},
number = {15},
pages = {10604},
publisher = {APS},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Ground state of hydrogenic donors near semiconductor surfaces in a magnetic field Article de journal Y Chen Physics Letters A, 143 (3), p. 152–154, 1990. @article{chen1990ground,
title = {Ground state of hydrogenic donors near semiconductor surfaces in a magnetic field},
author = {Y Chen},
year = {1990},
date = {1990-01-01},
journal = {Physics Letters A},
volume = {143},
number = {3},
pages = {152--154},
publisher = {Elsevier},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Investigation on the quantum well structure of a GaAs/Al0. 3Ga0. 7As superlattice grown on a misoriented substrate Article de journal Y Jin; Y Chen; X Zhu; SL Zhang Journal of applied physics, 68 (7), p. 3795–3797, 1990. @article{jin1990investigation,
title = {Investigation on the quantum well structure of a GaAs/Al0. 3Ga0. 7As superlattice grown on a misoriented substrate},
author = {Y Jin and Y Chen and X Zhu and SL Zhang},
year = {1990},
date = {1990-01-01},
journal = {Journal of applied physics},
volume = {68},
number = {7},
pages = {3795--3797},
publisher = {American Institute of Physics},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Monolayer fluctuation effects on the inter-well coupling in the GaAs(GaAl) As double quantum well systems Article de journal P Lefebvre; C Deparis; P Bonnel; B Gil; Y Chen; J Massies; G Neu; H Mathieu Superlattices and microstructures, 8 (2), p. 187–190, 1990. @article{lefebvre1990monolayer,
title = {Monolayer fluctuation effects on the inter-well coupling in the GaAs(GaAl) As double quantum well systems},
author = {P Lefebvre and C Deparis and P Bonnel and B Gil and Y Chen and J Massies and G Neu and H Mathieu},
year = {1990},
date = {1990-01-01},
journal = {Superlattices and microstructures},
volume = {8},
number = {2},
pages = {187--190},
publisher = {Academic Press},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Reflectance study of interwell couplings in GaAs-Ga 1- x Al x As double quantum wells Article de journal P Bonnel; P Lefebvre; B Gil; H Mathieu; C Deparis; J Massies; G Neu; Y Chen Physical Review B, 42 (6), p. 3435, 1990. @article{bonnel1990reflectance,
title = {Reflectance study of interwell couplings in GaAs-Ga 1- x Al x As double quantum wells},
author = {P Bonnel and P Lefebvre and B Gil and H Mathieu and C Deparis and J Massies and G Neu and Y Chen},
year = {1990},
date = {1990-01-01},
journal = {Physical Review B},
volume = {42},
number = {6},
pages = {3435},
publisher = {American Physical Society},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
1989
|
Exciton reflectivity of GaAs/Ga 1- x Al x As multiple quantum wells Article de journal Y Chen; R Cingolani; J Massies Il Nuovo Cimento D, 11 (7), p. 1049–1055, 1989. @article{chen1989exciton,
title = {Exciton reflectivity of GaAs/Ga 1- x Al x As multiple quantum wells},
author = {Y Chen and R Cingolani and J Massies},
year = {1989},
date = {1989-01-01},
journal = {Il Nuovo Cimento D},
volume = {11},
number = {7},
pages = {1049--1055},
publisher = {Kluwer Academic Publishers},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
